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TO-220-3FP
Discrete Semiconductor Products

SIHF12N50C-E3

LTB

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TO-220-3FP
Discrete Semiconductor Products

SIHF12N50C-E3

LTB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIHF12N50C-E3
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]48 nC
Input Capacitance (Ciss) (Max) @ Vds1375 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)36 W
Rds On (Max) @ Id, Vgs555 mOhm
Supplier Device PackageTO-220 Full Pack
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.06
50$ 4.01
100$ 3.44
500$ 3.05

Description

General part information

SIHF12 Series

N-Channel 500 V 12A (Tc) 36W (Tc) Through Hole TO-220 Full Pack

Documents

Technical documentation and resources