Specification	FDP038AN06A0-F102

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	124 nC
Input Capacitance (Ciss) (Max) @ Vds	6400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	310 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDP038AN06A0 Series

N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max) [Max]	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type
ON Semiconductor FDP038AN06A0-F102	6 V 10 V	20 V	310 W	TO-220-3	MOSFET (Metal Oxide)	60 V	4 V	124 nC	-55 °C	175 ░C	N-Channel	6400 pF	TO-220-3	3.8 mOhm	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel PowerTrench®MOSFET60 V, 80 A, 3.8 mΩ

Technical documentation and resources