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ONSEMI BAS40LT1G
Discrete Semiconductor Products

NSVBAV23CLT1G

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ON Semiconductor

250 V DUAL HIGH VOLTAGE COMMON CATHODE SWITCHING DIODE

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ONSEMI BAS40LT1G
Discrete Semiconductor Products

NSVBAV23CLT1G

Active
ON Semiconductor

250 V DUAL HIGH VOLTAGE COMMON CATHODE SWITCHING DIODE

Technical Specifications

Parameters and characteristics for this part

SpecificationNSVBAV23CLT1G
Current - Average Rectified (Io) (per Diode)400 mA
Current - Reverse Leakage @ Vr100 nA
Diode Configuration1 Pair Common Cathode
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)150 ns
Speed200 mA, 500 ns
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]250 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.40
10$ 0.24
100$ 0.15
500$ 0.12
1000$ 0.10
Digi-Reel® 1$ 0.40
10$ 0.24
100$ 0.15
500$ 0.12
1000$ 0.10
Tape & Reel (TR) 3000$ 0.06
6000$ 0.06
NewarkEach (Supplied on Cut Tape) 1$ 0.20
ON SemiconductorN/A 1$ 0.04

Description

General part information

NSVBAV23 Series

The high voltage switching diode is designed for high voltage, high speed switching applications. This common cathode dual diode device contains two high voltage switching diodes encapsulated in a SOT-23 surface mount package.