Discrete Semiconductor Products

VS-65APS12LHM3

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DIODE GEN PURP 1.2KV 65A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 1.2KV 65A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-65APS12LHM3

Current - Average Rectified (Io)	65 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SC-65-3, TO-3P-3
Qualification	AEC-Q101
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-247AD (TO-3P)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.12 V

Part	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Speed	Qualification	Technology	Mounting Type	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division VS-65APS12LHM3	Automotive	1.2 kV	100 µA	Standard Recovery >500ns	200 mA	AEC-Q101	Standard	Through Hole	SC-65-3 TO-3P-3	1.12 V	65 A	TO-247AD (TO-3P)	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 2.43

General part information

Diode 1200 V 65A Through Hole TO-247AD (TO-3P)

Technical documentation and resources