Littelfuse Power Semi TO-247 3 H 2Sq 1W2N 3L image

Discrete Semiconductor Products

IXTH110N25T

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Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 250 V, 110 A, 0.026 OHM, TO-247, THROUGH HOLE

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

IXTH110N25T

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 250 V, 110 A, 0.026 OHM, TO-247, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH110N25T

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	157 nC
Input Capacitance (Ciss) (Max) @ Vds	9400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	694 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IXTH110N10L2 Series

DiscMSFT NChTrenchGate-Gen1 TO-247AD

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)
Littelfuse/Commercial Vehicle Products IXTH110N25T	110 A	10 V	4.5 V	24 mOhm	TO-247 (IXTH)	157 nC	N-Channel	250 V	-55 °C	150 °C	20 V	694 W	Through Hole	9400 pF	MOSFET (Metal Oxide)	TO-247-3
Littelfuse/Commercial Vehicle Products IXTH110N10L2	110 A	10 V	4.5 V		TO-247 (IXTH)		N-Channel	100 V			20 V		Through Hole	10500 pF	MOSFET (Metal Oxide)	TO-247-3	260 nC	18 mOhm	600 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 9.81
		30	$ 7.83
		120	$ 7.00
		510	$ 6.18
		1020	$ 5.56
Newark	Each	1	$ 9.91
		25	$ 7.93
		100	$ 5.95
		250	$ 5.33
		500	$ 5.16
		1000	$ 5.00

Description

General part information

IXTH110N10L2 Series

Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are "extended" when the positive feedback of electro-thermal instability is suppressed, giving rise to larger "operating windows." The FBSOAs are guaranteed at 75°C.