PSMN9R3-60HSX

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MOSFET 2N-CH 60V 40A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 40A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN9R3-60HSX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	34.2 nC
Input Capacitance (Ciss) (Max) @ Vds	2348 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	68 W
Rds On (Max) @ Id, Vgs	9.3 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Configuration	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP PSMN9R3-60HSX	40 A	Surface Mount	2 N-Channel (Dual)	MOSFET (Metal Oxide)	8-LFPAK56 SOT-1205	34.2 nC	60 V	68 W	2348 pF	LFPAK56D	-55 °C	175 ░C	9.3 mOhm

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General part information

Mosfet Array 60V 40A (Ta) 68W (Ta) Surface Mount LFPAK56D

Technical documentation and resources