Discrete Semiconductor Products

SIA777EDJ-T1-GE3

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MOSFET N/P-CH 20V/12V 1.5A SC70

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Discrete Semiconductor Products

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MOSFET N/P-CH 20V/12V 1.5A SC70

Technical Specifications

Parameters and characteristics for this part

Specification	SIA777EDJ-T1-GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	1.5 A, 4.5 A
Drain to Source Voltage (Vdss)	12 V, 20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	2.2 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Power - Max	5 W, 7.8 W
Rds On (Max) @ Id, Vgs	225 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Power - Max	Package / Case	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Configuration
Vishay General Semiconductor - Diodes Division SIA777EDJ-T1-GE3	5 W 7.8 W	PowerPAK® SC-70-6 Dual	12 V 20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	2.2 nC	Logic Level Gate	1 V	1.5 A 4.5 A	Surface Mount	PowerPAK® SC-70-6 Dual	225 mOhm	N and P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V, 12V 1.5A, 4.5A 5W, 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Technical documentation and resources