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TO-92-3 Formed Leads
Discrete Semiconductor Products

BC183LC_J35Z

Obsolete
ON Semiconductor

TRANS NPN 30V 0.1A TO92-3

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TO-92-3 Formed Leads
Discrete Semiconductor Products

BC183LC_J35Z

Obsolete
ON Semiconductor

TRANS NPN 30V 0.1A TO92-3

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Technical Specifications

Parameters and characteristics for this part

SpecificationBC183LC_J35Z
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Frequency - Transition150 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-226-3, TO-92-3
Power - Max [Max]350 mW
Supplier Device PackageTO-92-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

BC183 Series

PartVoltage - Collector Emitter Breakdown (Max) [Max]Supplier Device PackageFrequency - TransitionOperating Temperature [Min]Operating Temperature [Max]Power - Max [Max]Current - Collector (Ic) (Max) [Max]DC Current Gain (hFE) (Min) @ Ic, VceTransistor TypeMounting TypePackage / CaseVce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max) [Max]DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
TO-92-3(StandardBody),TO-226_straightlead
ON Semiconductor
BC183C
30 V
TO-92-3
150 MHz
-55 °C
150 °C
350 mW
100 mA
120
NPN
Through Hole
TO-226-3
TO-92-3
600 mV
15 nA
TO-92-3 Formed Leads
ON Semiconductor
BC183LC_J35Z
30 V
TO-92-3
150 MHz
-55 °C
150 °C
350 mW
100 mA
NPN
Through Hole
TO-226-3
TO-92-3
600 mV
15 nA
40
TO-92-3(StandardBody),TO-226_straightlead
ON Semiconductor
BC183LC
30 V
TO-92-3
150 MHz
-55 °C
150 °C
350 mW
100 mA
NPN
Through Hole
TO-226-3
TO-92-3
600 mV
15 nA
40
TO-92-3 Formed Leads
ON Semiconductor
BC183LC_D27Z
30 V
TO-92-3
150 MHz
-55 °C
150 °C
350 mW
100 mA
NPN
Through Hole
TO-226-3
TO-92-3
600 mV
15 nA
40
TO-92-3 Formed Leads
ON Semiconductor
BC183_D27Z
30 V
TO-92-3
150 MHz
-55 °C
150 °C
350 mW
100 mA
NPN
Through Hole
TO-226-3
TO-92-3
600 mV
15 nA
40
TO-92-3 Formed Leads
ON Semiconductor
BC183_D75Z
30 V
TO-92-3
150 MHz
-55 °C
150 °C
350 mW
100 mA
NPN
Through Hole
TO-226-3
TO-92-3
600 mV
15 nA
40

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

BC183 Series

Bipolar (BJT) Transistor NPN 30 V 100 mA 150MHz 350 mW Through Hole TO-92-3

Documents

Technical documentation and resources

No documents available