Discrete Semiconductor Products
RSJ250P10FRATL
ActiveRohm Semiconductor
TRANSISTOR MOSFET P-CH 100V 25A 3-PIN TO-263 EMBOSS T/R
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Discrete Semiconductor Products
RSJ250P10FRATL
ActiveRohm Semiconductor
TRANSISTOR MOSFET P-CH 100V 25A 3-PIN TO-263 EMBOSS T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RSJ250P10FRATL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 25 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 4 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 8000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 50 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 63 mOhm |
| Supplier Device Package | LPTS |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RSJ250P10FRA Series
RSJ250P10FRA is the high reliability Automotive MOSFET.
Documents
Technical documentation and resources