Specification	FJA4213OTU

Current - Collector (Ic) (Max) [Max]	17 A
Current - Collector Cutoff (Max) [Max]	5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	55
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	130 W
Supplier Device Package	TO-3P
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	250 V

FJA4213 Series

PNP Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Package / Case	Mounting Type
ON Semiconductor FJA4213RTU	5 µA	30 MHz	130 W	17 A	3 V	TO-3P	250 V	PNP	55	150 °C	SC-65-3 TO-3P-3	Through Hole
ON Semiconductor FJA4213OTU	5 µA	30 MHz	130 W	17 A	3 V	TO-3P	250 V	PNP	55	150 °C	SC-65-3 TO-3P-3	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources