Discrete Semiconductor Products

IXFH18N60P

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Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

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Discrete Semiconductor Products

IXFH18N60P

Active

Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

Deep-Dive with AI

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH18N60P

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	360 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

IXFH18N100Q3 Series

DiscMSFT NChHiPerFET-Q3 Class TO-247AD

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
Littelfuse/Commercial Vehicle Products IXFH18N100Q3	18 A	830 W	-55 °C	150 °C	90 nC	30 V	Through Hole	TO-247-3	660 mOhm	MOSFET (Metal Oxide)	6.5 V	10 V	TO-247AD (IXFH)	1000 V	N-Channel
Littelfuse/Commercial Vehicle Products IXFH18N60P	18 A		-55 °C	150 °C	50 nC	30 V	Through Hole	TO-247-3	400 mOhm	MOSFET (Metal Oxide)	5.5 V	10 V	TO-247AD (IXFH)	600 V	N-Channel	2500 pF	360 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.12
		30	$ 4.89
		120	$ 4.37
		510	$ 3.86
		1020	$ 3.47
		2010	$ 3.25
Newark	Each	100	$ 4.54
		100	$ 4.54
		500	$ 4.13
		500	$ 4.13
		1000	$ 3.64
		1000	$ 3.64
		2500	$ 3.39
		2500	$ 3.39

Description

General part information

IXFH18N100Q3 Series

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings

Documents

Technical documentation and resources