Discrete Semiconductor Products

PN2484_D26Z

Obsolete

TRANS NPN 60V 0.1A TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 60V 0.1A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	PN2484_D26Z

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	350 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Power - Max [Max]	Supplier Device Package	Mounting Type	Vce Saturation (Max) @ Ib, Ic [Max]	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Package / Case
ON Semiconductor PN2484_D75Z	625 mW	TO-92-3	Through Hole	350 mV	NPN	-55 °C	150 °C	100 mA	100	60 V	0.01 µA	TO-226-3 TO-92-3
ON Semiconductor PN2484	625 mW	TO-92-3	Through Hole	350 mV	NPN	-55 °C	150 °C	100 mA	100	60 V	0.01 µA	TO-226-3 TO-92-3
ON Semiconductor PN2484_D26Z	625 mW	TO-92-3	Through Hole	350 mV	NPN	-55 °C	150 °C	100 mA	100	60 V	0.01 µA	TO-226-3 TO-92-3
ON Semiconductor PN2484_D74Z	625 mW	TO-92-3	Through Hole	350 mV	NPN	-55 °C	150 °C	100 mA	100	60 V	0.01 µA	TO-226-3 TO-92-3
ON Semiconductor PN2484_D27Z	625 mW	TO-92-3	Through Hole	350 mV	NPN	-55 °C	150 °C	100 mA	100	60 V	0.01 µA	TO-226-3 TO-92-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 60 V 100 mA 625 mW Through Hole TO-92-3

Technical documentation and resources