Discrete Semiconductor Products

VS-EPX6007L-N3

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DIODE GEN PURP 650V 60A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 650V 60A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-EPX6007L-N3

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	42 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	2.5 V

Part	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Package / Case	Speed	Technology
Vishay General Semiconductor - Diodes Division VS-EPX6007L-N3	42 ns	650 V	Through Hole	175 ░C	-55 C	TO-247AD	2.5 V	30 µA	60 A	TO-247-2	200 mA 500 ns	Standard

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General part information

Diode 650 V 60A Through Hole TO-247AD

Technical documentation and resources