Discrete Semiconductor Products

PJQ1906_R1_00201

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20V N-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

Active

20V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ1906_R1_00201

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.9 nC
Input Capacitance (Ciss) (Max) @ Vds	45 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-UFDFN
Power Dissipation (Max) [Max]	700 mW
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	DFN1006-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max) [Max]
Panjit International Inc. PJQ1906_R1_00201	150 °C	-55 °C	1.2 Ohm	3-UFDFN	1 V	DFN1006-3	45 pF	N-Channel	1.2 V	4.5 V	0.9 nC	MOSFET (Metal Oxide)	30 V	10 V	300 mA	Surface Mount	700 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 300mA (Ta) 700mW (Ta) Surface Mount DFN1006-3

Technical documentation and resources