SI8902AEDB-T2-E1

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MOSFET 2N-CH 24V 11A 6MICRO FOOT

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MOSFET 2N-CH 24V 11A 6MICRO FOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8902AEDB-T2-E1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	24 V
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFBGA
Power - Max [Max]	5.7 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	6-Micro Foot™ (1.5x1)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	900 mV

Part	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Configuration
Vishay General Semiconductor - Diodes Division SI8902AEDB-T2-E1	5.7 W	28 mOhm	900 mV	MOSFET (Metal Oxide)	6-Micro Foot™ (1.5x1)	Surface Mount	-55 °C	150 °C	11 A	6-UFBGA	24 V	2 N-Channel (Dual)

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General part information

Mosfet Array 24V 11A 5.7W Surface Mount 6-Micro Foot™ (1.5x1)

Technical documentation and resources