Discrete Semiconductor Products

MMDF2N02ER2

Obsolete

ON Semiconductor

POWER MOSFET 25V 3.6A 100 MOHM DUAL N-CHANNEL SO-8

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Discrete Semiconductor Products

MMDF2N02ER2

Obsolete

ON Semiconductor

POWER MOSFET 25V 3.6A 100 MOHM DUAL N-CHANNEL SO-8

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MMDF2N02ER2

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	30 nC
Input Capacitance (Ciss) (Max) @ Vds	532 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

MMDF2P02HD Series

Power MOSFET 20V 3.3A 160 mOhm Dual P-Channel SO-8

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor MMDF2N02ER2	25 V	3.6 A	3 V	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	30 nC	2 W	-55 °C	150 °C	Logic Level Gate	Surface Mount	532 pF	MOSFET (Metal Oxide)	100 mOhm	8-SOIC
ON Semiconductor MMDF2P02HDR2G	20 V	3.3 A	2 V	8-SOIC	3.9 mm	0.154 in	2 P-Channel		2 W	-55 °C	150 °C	Logic Level Gate	Surface Mount	588 pF	MOSFET (Metal Oxide)	160 mOhm	8-SOIC	20 nC
ON Semiconductor MMDF2C03HDR2	30 V	3 A 4.1 A	3 V	8-SOIC	3.9 mm	0.154 in	N and P-Channel		2 W	-55 °C	150 °C	Logic Level Gate	Surface Mount	630 pF	MOSFET (Metal Oxide)	70 mOhm	8-SOIC	16 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MMDF2P02HD Series

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

Documents

Technical documentation and resources