Discrete Semiconductor Products

FDR8508P

Obsolete

MOSFET 2P-CH 30V 3A SUPERSOT 8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 30V 3A SUPERSOT 8

Technical Specifications

Parameters and characteristics for this part

Specification	FDR8508P

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	12 nC, 5 V
Input Capacitance (Ciss) (Max) @ Vds	750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSOP
Package / Case	0.13 in
Package / Case [y]	3.3 mm
Power - Max [Max]	800 mW
Supplier Device Package	SuperSOT™-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Technology	Vgs(th) (Max) @ Id	Package / Case [y]	Package / Case	Package / Case	Configuration	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Package / Case [x]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	FET Type
ON Semiconductor FDR8508P	MOSFET (Metal Oxide)	3 V	3.3 mm	8-TSOP	0.13 in	2 P-Channel	SuperSOT™-8	-55 °C	150 °C	800 mW	750 pF	Logic Level Gate	30 V	5 V 12 nC	3 A	Surface Mount
ON Semiconductor FDR858P	MOSFET (Metal Oxide)	3 V		8-LSOP			SuperSOT™-8	-55 °C	150 °C		2010 pF		30 V		8 A	Surface Mount	4.5 V 10 V	19 mOhm	0.13 in	3.3 mm	30 nC	1.8 W	20 V	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	201	$ 1.50

General part information

Mosfet Array 30V 3A 800mW Surface Mount SuperSOT™-8

Technical documentation and resources

No documents available