Discrete Semiconductor Products

RJK4018DPK-00#T0

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MOSFET N-CH 400V 43A TO3P

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Discrete Semiconductor Products

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MOSFET N-CH 400V 43A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	RJK4018DPK-00#T0

Current - Continuous Drain (Id) @ 25°C	43 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	99 nC
Input Capacitance (Ciss) (Max) @ Vds	4100 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)
Renesas Electronics Corporation RJK4018DPK-00#T0	N-Channel	SC-65-3 TO-3P-3	99 nC	400 V	150 °C	10 V	Through Hole	43 A	200 W	4100 pF	MOSFET (Metal Oxide)	TO-3P	100 mOhm	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 400 V 43A (Ta) 200W (Tc) Through Hole TO-3P

Technical documentation and resources