Discrete Semiconductor Products

BC638-AP

Obsolete

TRANS PNP 60V 1A TO92

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PNP 60V 1A TO92

Technical Specifications

Parameters and characteristics for this part

Specification	BC638-AP

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3
Supplier Device Package	TO-92
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Transistor Type	Mounting Type	Current - Collector (Ic) (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Max]	Operating Temperature [Min]
Micro Commercial Components BC638-AP	PNP	Through Hole	1 A	TO-226-3 TO-92-3	100 nA	100	500 mV	TO-92	100 MHz	60 V	150 °C	-65 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 60 V 1 A 100MHz 830 mW Through Hole TO-92

Technical documentation and resources