Discrete Semiconductor Products

BAT82S-TR

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DIODE SCHOTTKY 50V 30MA DO35

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Discrete Semiconductor Products

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DIODE SCHOTTKY 50V 30MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	BAT82S-TR

Capacitance @ Vr, F	1.6 pF
Current - Average Rectified (Io)	30 mA
Current - Reverse Leakage @ Vr	200 nA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction	125 °C
Package / Case	Axial, DO-35, DO-204AH
Qualification	AEC-Q101
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-204AH (DO-35)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Qualification	Mounting Type	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Speed	Speed	Supplier Device Package	Current - Average Rectified (Io)	Grade
Vishay General Semiconductor - Diodes Division BAT82S-TR	AEC-Q101	Through Hole	1.6 pF	1 V	Axial DO-204AH DO-35	50 V	Schottky	200 nA	125 °C	Any Speed	200 mA	DO-204AH (DO-35)	30 mA	Automotive
Vishay General Semiconductor - Diodes Division BAT82S-TAP	AEC-Q101	Through Hole	1.6 pF	1 V	Axial DO-204AH DO-35	50 V	Schottky	200 nA	125 °C	Any Speed	200 mA	DO-204AH (DO-35)	30 mA	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 50 V 30mA Through Hole DO-204AH (DO-35)

Technical documentation and resources