Discrete Semiconductor Products

FDP5690

Obsolete

MOSFET N-CH 60V 32A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 32A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	FDP5690

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1120 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power Dissipation (Max)	58 W
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDP5690	32 A	20 V	6 V 10 V	1120 pF	TO-220-3	N-Channel	60 V	Through Hole	58 W	4 V	175 ░C	-65 °C	TO-220-3	27 mOhm	MOSFET (Metal Oxide)
ON Semiconductor FDP5680		20 V	6 V 10 V	1850 pF	TO-220-3	N-Channel	60 V	Through Hole	65 W	4 V	175 ░C	-65 °C	TO-220-3	20 mOhm	MOSFET (Metal Oxide)	46 nC
ON Semiconductor FDP5690	32 A	20 V	6 V 10 V	1120 pF	TO-220-3	N-Channel	60 V	Through Hole	58 W	4 V	175 ░C	-65 °C	TO-220-3	27 mOhm	MOSFET (Metal Oxide)
ON Semiconductor FDP5645	80 A	20 V	6 V 10 V	4468 pF	TO-220-3	N-Channel	60 V	Through Hole	125 W	4 V	175 ░C	-65 °C	TO-220-3	9.5 mOhm	MOSFET (Metal Oxide)		107 nC
ON Semiconductor FDP5680		20 V	6 V 10 V	1850 pF	TO-220-3	N-Channel	60 V	Through Hole	65 W	4 V	175 ░C	-65 °C	TO-220-3	20 mOhm	MOSFET (Metal Oxide)	46 nC
ON Semiconductor FDP5645	80 A	20 V	6 V 10 V	4468 pF	TO-220-3	N-Channel	60 V	Through Hole	125 W	4 V	175 ░C	-65 °C	TO-220-3	9.5 mOhm	MOSFET (Metal Oxide)		107 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 32A (Tc) 58W (Tc) Through Hole TO-220-3

Technical documentation and resources