Discrete Semiconductor Products

SIHJ240N60E-T1-GE3

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MOSFET N-CH 600V 12A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 600V 12A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIHJ240N60E-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	783 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case
Vishay General Semiconductor - Diodes Division SIHJ240N60E-T1-GE3	10 V	-55 °C	150 °C	23 nC	Surface Mount	5 V	MOSFET (Metal Oxide)	30 V	N-Channel	600 V	240 mOhm	12 A	783 pF	PowerPAK® SO-8	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 12A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources