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SOT 23
Discrete Semiconductor Products

BSS138-13P

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SOT 23
Discrete Semiconductor Products

BSS138-13P

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSS138-13P
Current - Continuous Drain (Id) @ 25°C220 mA
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]1.65 nC
Input Capacitance (Ciss) (Max) @ Vds60 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]350 mW
Rds On (Max) @ Id, Vgs2.5 Ohm
Supplier Device PackageSOT-23
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 10000$ 0.03

Description

General part information

BSS138 Series

N-Channel 50 V 220mA (Ta) 350mW Surface Mount SOT-23

Documents

Technical documentation and resources