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TO252-3
Discrete Semiconductor Products

IPD06P004NSAUMA1

Obsolete
INFINEON

MOSFET P-CH 60V 16.4A TO252

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TO252-3
Discrete Semiconductor Products

IPD06P004NSAUMA1

Obsolete
INFINEON

MOSFET P-CH 60V 16.4A TO252

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD06P004NSAUMA1
Current - Continuous Drain (Id) @ 25°C16.4 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC
Input Capacitance (Ciss) (Max) @ Vds1100 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)63 W
Rds On (Max) @ Id, Vgs90 mOhm
Supplier Device PackagePG-TO252-3-313
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.41

Description

General part information

IPD06P Series

P-Channel 60 V 16.4A (Tc) 63W (Tc) Surface Mount PG-TO252-3-313

Documents

Technical documentation and resources

No documents available