HMC902LP3E
Active5 GHZ TO 11 GHZ GAAS, PHEMT, MMIC, LOW NOISE AMPLIFIER
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HMC902LP3E
Active5 GHZ TO 11 GHZ GAAS, PHEMT, MMIC, LOW NOISE AMPLIFIER
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | HMC902LP3E |
|---|---|
| Current - Supply | 110 mA |
| Frequency [Max] | 10 GHz |
| Frequency [Min] | 5 GHz |
| Gain | 19.5 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 1.8 dB |
| P1dB | 16 dBm |
| Package / Case | 16-VFQFN Exposed Pad |
| RF Type | General Purpose |
| Supplier Device Package | 16-QFN (3x3) |
| Voltage - Supply | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 210 | $ 44.05 | 1m+ |
| Strip | 1 | $ 51.87 | 1m+ | |
| 10 | $ 41.41 | |||
| 25 | $ 38.38 | |||
| 100 | $ 34.72 | |||
| 250 | $ 32.81 | |||
Description
General part information
HMC902LP3E Series
The HMC902LP3E is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA), which is self biased with optional bias control for IDQ reduction. The HMC902LP3E is housed in a leadless 3 mm × 3 mm plastic surface mount package. The amplifier operates between 5 GHz and 11 GHz, providing 19.5 dB of small signal gain, 1.8 dB noise figure, and 28 dBm of output IP3, while requiring only 80 mA from a 3.5 V supply.The P1dB output power of 16 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q, or image reject mixers. The HMC902LP3E also features inputs/outputs that are dc blocked and internally matched to 50 Ω, making it ideal for high capacity microwave radios and C band, very small aperture terminal (VSAT) applications.ApplicationsPoint to point radiosPoint to multi point radiosMilitary and spaceTest instrumentation
Documents
Technical documentation and resources
