Discrete Semiconductor Products

IRFH7185TRPBF

Obsolete

MOSFET N CH 100V 19A 8QFN

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N CH 100V 19A 8QFN

Technical Specifications

Parameters and characteristics for this part

Specification	IRFH7185TRPBF

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2320 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	160 W, 3.6 W
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Supplier Device Package	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)
INFINEON IRFH7185TRPBF	19 A	10 V	Surface Mount	150 °C	-55 °C	54 nC	20 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	3.6 W 160 W	2320 pF	8-PowerTDFN	3.6 V	5.2 mOhm	N-Channel	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.43

General part information

N-Channel 100 V 19A (Ta) 3.6W (Ta), 160W (Tc) Surface Mount 8-PQFN (5x6)

Technical documentation and resources