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TO-220AB Full Pack
Discrete Semiconductor Products

IRFI4227PBF

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INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 FULLPAK PACKAGE; 25 MOHM;

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TO-220AB Full Pack
Discrete Semiconductor Products

IRFI4227PBF

Active
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 FULLPAK PACKAGE; 25 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFI4227PBF
Current - Continuous Drain (Id) @ 25°C26 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs110 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4600 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)46 W
Rds On (Max) @ Id, Vgs25 mOhm
Supplier Device PackageTO-220AB Full-Pak
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 5$ 4.13
Tube 1$ 4.16
10$ 2.74
100$ 1.93
500$ 1.59
1000$ 1.48
2000$ 1.48

Description

General part information

IRFI4227 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.