Discrete Semiconductor Products

SI7972DP-T1-GE3

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MOSFET 2N-CH 60V 8A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 8A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7972DP-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	1050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	22 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.7 V

Part	Power - Max [Max]	Configuration	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Technology
Vishay General Semiconductor - Diodes Division SI7972DP-T1-GE3	22 W	2 N-Channel (Dual)	18 mOhm	Surface Mount	2.7 V	PowerPAK® SO-8 Dual	8 A	-55 °C	150 °C	60 V	1050 pF	11 nC	PowerPAK® SO-8 Dual	MOSFET (Metal Oxide)

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General part information

Mosfet Array 60V 8A (Tc) 22W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources