Discrete Semiconductor Products

SIHF8N50D-E3

LTB

MOSFET N-CH 500V 8.7A TO220

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 8.7A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SIHF8N50D-E3

Current - Continuous Drain (Id) (Tc)	8.7 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Input Capacitance (Ciss) (Max)	527 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220 Full Pack
Power Dissipation (Max)	33 W
Rds On (Max)	850 mOhm, 850 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Vgs (Max)	Package / Case	FET Type	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Technology	Rds On (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Package Name
Vishay Dale SIHF8N50D-E3	500 V	5 V	30 V	TO-220-3 Full Pack	N-Channel	33 W	Through Hole	10 V	8.7 A	MOSFET (Metal Oxide)	850 mOhm 850 mOhm	527 pF	-55 °C	150 °C	30 nC	TO-220 Full Pack

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.70	1m+
	Tube	1000	$ 0.70	1m+
		2000	$ 0.66
		5000	$ 0.63
		10000	$ 0.60

3D models and CAD resources for this part

General part information

N-Channel 500 V 8.7A (Tc) 33W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources