Discrete Semiconductor Products

BTS244ZE3043AKSA2

LTB

MOSFET N-CH 55V 35A TO220-5-12

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Discrete Semiconductor Products

LTB

MOSFET N-CH 55V 35A TO220-5-12

Technical Specifications

Parameters and characteristics for this part

Specification	BTS244ZE3043AKSA2

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Temperature Sensing Diode
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	2660 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-5
Power Dissipation (Max)	170 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	PG-TO220-5-12
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	FET Type	Supplier Device Package	FET Feature	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Grade	Operating Temperature [Max]	Operating Temperature [Min]	Qualification
INFINEON BTS244ZE3062AATMA2	N-Channel	PG-TO263-5-2	Temperature Sensing Diode	Surface Mount	MOSFET (Metal Oxide)	55 V	2660 pF	D2PAK (4 Leads + Tab) TO-263-5 TO-263BB	4.5 V 10 V	13 mOhm	20 V	130 nC	2 V	170 W	35 A	Automotive	175 °C	-40 °C	AEC-Q101
INFINEON BTS244ZE3043AKSA2	N-Channel	PG-TO220-5-12	Temperature Sensing Diode	Through Hole	MOSFET (Metal Oxide)	55 V	2660 pF	TO-220-5	4.5 V 10 V	13 mOhm	20 V	130 nC	2 V	170 W	35 A	Automotive	175 °C	-40 °C	AEC-Q101

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General part information

N-Channel 55 V 35A (Tc) 170W (Tc) Through Hole PG-TO220-5-12

Technical documentation and resources

No documents available