Discrete Semiconductor Products

SIA413ADJ-T1-GE3

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MOSFET P-CH 12V 12A PPAK SC70-6

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Discrete Semiconductor Products

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MOSFET P-CH 12V 12A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA413ADJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	57 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	19 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIA413ADJ-T1-GE3	P-Channel	8 V	29 mOhm	PowerPAK® SC-70-6 Single	MOSFET (Metal Oxide)	1 V	PowerPAK® SC-70-6	12 V	12 A	57 nC	19 W	-55 °C	150 °C	Surface Mount	1800 pF	1.5 V 4.5 V

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General part information

P-Channel 12 V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Technical documentation and resources