Discrete Semiconductor Products

2N5551

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BIPOLAR TRANSISTORS - BJT BJT, TO-92, 160V, 600MA, NPN

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT BJT, TO-92, 160V, 600MA, NPN

Technical Specifications

Parameters and characteristics for this part

Specification	2N5551

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max)	160 V

Part	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr	Speed	Voltage - Forward (Vf) (Max) @ If	Technology	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Transistor Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)
Diotec Semiconductor 20SQ045-3G	P-600 P600	P600 Axial	200 µA	200 mA 500 ns	550 mV	Schottky	Through Hole	150 °C	-50 °C	45 V
Diotec Semiconductor 2N3904	TO-92	TO-226-3 TO-92-3 TO-92-3 (TO-226AA) Formed Leads					Through Hole				40 V	200 mA	625 mW	0.3 V	300 MHz	150 °C	-55 °C	TO-226AA	NPN	50 nA	100
Diotec Semiconductor 2N5551	TO-92	TO-226-3 TO-92-3					Through Hole					600 mA	625 mW	200 mV	300 MHz	150 °C	-55 °C	TO-226AA	NPN	50 nA	80	160 V
Diotec Semiconductor 2N5401	TO-92	TO-226-3 TO-92-3					Through Hole				150 V	600 mA	625 mW	500 mV	400 MHz	150 °C	-55 °C	TO-226AA	PNP	100 nA	60

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92

Technical documentation and resources