Discrete Semiconductor Products

2SC5866TLR

LTB

Rohm Semiconductor

BIPOLAR TRANSISTORS - BJT NPN 60V 2A

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Discrete Semiconductor Products

2SC5866TLR

LTB

Rohm Semiconductor

BIPOLAR TRANSISTORS - BJT NPN 60V 2A

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5866TLR

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-96
Power - Max [Max]	500 mW
Supplier Device Package	TSMT3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

2SC5866 Series

NPN, SOT-346T, 60V 2A, High Speed Switching Transistor

Part	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Supplier Device Package	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Operating Temperature
Rohm Semiconductor 2SC5866TLR	2 A	200 MHz	120	NPN	60 V	SC-96	1 µA	500 mW	TSMT3	Surface Mount	500 mV	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	23617	$ 0.73
Mouser	N/A	1	$ 0.52
		10	$ 0.41
		100	$ 0.27
		500	$ 0.21
		1000	$ 0.19
		3000	$ 0.13

Description

General part information

2SC5866 Series

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Documents

Technical documentation and resources

No documents available