Discrete Semiconductor Products

NTD14N03RT4G

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POWER MOSFET, N CHANNEL, 25 V, 14 A, 0.095 OHM, TO-252 (DPAK), SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 25 V, 14 A, 0.095 OHM, TO-252 (DPAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	NTD14N03RT4G

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.8 nC
Input Capacitance (Ciss) (Max) @ Vds	115 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	1.04 W, 20.8 W
Rds On (Max) @ Id, Vgs	95 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Single N-Channel Power MOSFET 25V, 14A, 95mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTD14N03RT4G	115 pF	2 V	MOSFET (Metal Oxide)	95 mOhm	N-Channel	-55 °C	150 °C	1.8 nC	2.5 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	1.04 W 20.8 W	25 V	DPAK	Surface Mount	4.5 V 10 V
ON Semiconductor NTD14N03RG	115 pF	2 V	MOSFET (Metal Oxide)	95 mOhm	N-Channel	-55 °C	150 °C	1.8 nC	2.5 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	1.04 W 20.8 W	25 V	DPAK	Surface Mount	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET14 A, 25 V, N−Channel DPAK

Technical documentation and resources