Specification	PHPT61006NY-QX

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	140
Frequency - Transition	170 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-100, SOT-669
Power - Max [Max]	1.3 W
Qualification	AEC-Q101
Supplier Device Package	Power-SO8, LFPAK56
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	340 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

PHPT61006NY-Q Series

100 V, 6 A NPN high power bipolar transistor

Part	Supplier Device Package	Frequency - Transition	Qualification	Operating Temperature	Package / Case	Grade	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Transistor Type	Power - Max [Max]
Nexperia USA Inc. PHPT61006NY-QX	LFPAK56 Power-SO8	170 MHz	AEC-Q101	175 °C	SC-100 SOT-669	Automotive	100 V	340 mV	140	100 nA	Surface Mount	NPN	1.3 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

Technical documentation and resources