Discrete Semiconductor Products

PSMNR60-25YLHX

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MOSFET N-CH 25V 300A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 25V 300A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMNR60-25YLHX

Current - Continuous Drain (Id) @ 25°C	300 A
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	147 nC
Input Capacitance (Ciss) (Max) @ Vds	8117 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	268 W
Rds On (Max) @ Id, Vgs [Max]	700 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type
Freescale Semiconductor - NXP PSMNR60-25YLHX	700 mOhm	20 V	2.2 V	4.5 V 10 V	SC-100 SOT-669	LFPAK56 Power-SO8	8117 pF	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	147 nC	300 A	268 W	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 300A (Tc) 268W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources