FDZ7064N

Obsolete

MOSFET N-CH 30V 13.5A 30BGA

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 13.5A 30BGA

Technical Specifications

Parameters and characteristics for this part

Specification	FDZ7064N

Current - Continuous Drain (Id) @ 25°C	13.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds	3843 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	30-WFBGA
Power Dissipation (Max)	2.2 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	30-BGA (4x3.5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDZ7064N	43 nC	12 V	-55 °C	150 °C	13.5 A	2 V	Surface Mount	30-WFBGA	30-BGA (4x3.5)	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	2.2 W	30 V	7 mOhm	3843 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 13.5A (Ta) 2.2W (Ta) Surface Mount 30-BGA (4x3.5)

Technical documentation and resources