Discrete Semiconductor Products

IPU135N08N3 G

Obsolete

MOSFET N-CH 80V 50A TO251-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 80V 50A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPU135N08N3 G

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1730 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	79 W
Rds On (Max) @ Id, Vgs	13.5 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs (Max)
INFINEON IPU135N08N3 G	Through Hole	175 °C	-55 °C	PG-TO251-3	6 V 10 V	3.5 V	80 V	79 W	25 nC	50 A	13.5 mOhm	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	1730 pF	N-Channel	20 V
INFINEON IPU135N03L G	Through Hole	175 °C	-55 °C	PG-TO251-3	4.5 V 10 V	2.2 V	30 V	31 W	10 nC	30 A	13.5 mOhm	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	1000 pF	N-Channel	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 80 V 50A (Tc) 79W (Tc) Through Hole PG-TO251-3

Technical documentation and resources