
HMC7149-SX
Active10 WATT GAN MMIC POWER AMPLIFIER, 6 - 18 GHZ
Deep-Dive with AI
Search across all available documentation for this part.

HMC7149-SX
Active10 WATT GAN MMIC POWER AMPLIFIER, 6 - 18 GHZ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | HMC7149-SX |
|---|---|
| Current - Supply | 680 mA |
| Frequency [Max] | 18 GHz |
| Frequency [Min] | 6 GHz |
| Gain | 21 dBi |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| RF Type | Radar |
| Supplier Device Package | Die |
| Test Frequency [Max] | 18 GHz |
| Test Frequency [Min] | 6 GHz |
| Voltage - Supply | 28 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
HMC7149-DIE Series
The HMC7149 is an 10W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 6 and 18 GHz. The amplifier typically provides 20 dB of small signal gain, +40 dBm of saturated output power, and +39.5 dBm output IP3 at +28 dBm output power per tone. The HMC7149 draws 680 mA current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All electrical performance data was acquired with the die eutectically attached to 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina.ApplicationsTest InstrumentationGeneral CommunicationsRadar
Documents
Technical documentation and resources