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BSF450NE7NH3XUMA1
Discrete Semiconductor Products

BSF450NE7NH3XUMA1

LTB
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; DIRECTFET™ S PACKAGE; 13.4 MOHM;

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BSF450NE7NH3XUMA1
Discrete Semiconductor Products

BSF450NE7NH3XUMA1

LTB
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; DIRECTFET™ S PACKAGE; 13.4 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSF450NE7NH3XUMA1
Current - Continuous Drain (Id) @ 25°C15 A, 5 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)7 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]390 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case3-WDSON
Power Dissipation (Max)18 W, 2.2 W
Rds On (Max) @ Id, Vgs45 mOhm
Supplier Device PackageMG-WDSON-2, CanPAK M™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.35
10$ 1.51
100$ 1.03
500$ 0.83
1000$ 0.76
2000$ 0.70
Digi-Reel® 1$ 2.35
10$ 1.51
100$ 1.03
500$ 0.83
1000$ 0.76
2000$ 0.70
N/A 0$ 0.68
Tape & Reel (TR) 5000$ 0.68

Description

General part information

BSF450 Series

The 75V OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance.

Documents

Technical documentation and resources