Discrete Semiconductor Products

S3D30065D1

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DIODE SCHOTTKY SILICON CARBIDE S

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Discrete Semiconductor Products

Active

DIODE SCHOTTKY SILICON CARBIDE S

Technical Specifications

Parameters and characteristics for this part

Specification	S3D30065D1

Capacitance @ Vr, F	2307 pF
Current - Average Rectified (Io)	84 A
Current - Reverse Leakage @ Vr	140 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247AD
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Capacitance @ Vr, F	Current - Average Rectified (Io)	Supplier Device Package	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If [Max]	Diode Configuration
SMC Diode Solutions S3D30065D1	650 V	TO-247-3	2307 pF	84 A	TO-247AD	500 mA	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky	140 µA	1.7 V	Through Hole	0 ns
SMC Diode Solutions S3D30065H	650 V	TO-247-2	2307 pF	84 A	TO-247AC	500 mA	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky	140 µA	1.7 V	Through Hole	0 ns
SMC Diode Solutions S3D30065D	650 V	TO-247-3			TO-247AD	200 mA 500 ns	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky	25 µA		Through Hole		15 A	1.7 V	1 Pair Common Cathode

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 84A Through Hole TO-247AD

Technical documentation and resources