Discrete Semiconductor Products

BUZ31 H3045A

Obsolete

MOSFET N-CH 200V 14.5A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 14.5A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	BUZ31 H3045A

Current - Continuous Drain (Id) @ 25°C	14.5 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	95 W
Rds On (Max) @ Id, Vgs	200 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Power Dissipation (Max)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology
INFINEON BUZ31 E3045A	95 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	-55 °C	10 V	200 mOhm	Surface Mount	14.5 A	N-Channel	20 V	1120 pF	200 V	MOSFET (Metal Oxide)
INFINEON BUZ31 H3045A	95 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	-55 °C	10 V	200 mOhm	Surface Mount	14.5 A	N-Channel	20 V	1120 pF	200 V	MOSFET (Metal Oxide)

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General part information

N-Channel 200 V 14.5A (Tc) 95W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources