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D882-R-TP
Discrete Semiconductor Products

D882-R-TP

Obsolete

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D882-R-TP
Discrete Semiconductor Products

D882-R-TP

Obsolete

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationD882-R-TP
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]60
Frequency - Transition90 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]1.25 W
Supplier Device PackageDPAK
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
0$ 0.00

Description

General part information

D882 Series

Bipolar (BJT) Transistor NPN 30 V 3 A 90MHz 1.25 W Surface Mount DPAK

Documents

Technical documentation and resources