Discrete Semiconductor Products

PN3565 TIN/LEAD

Obsolete

BIPOLAR TRANSISTORS - BJT NPN 30VCBO 25VCEO 6.0VEBO 50MA 625MW

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Discrete Semiconductor Products

Obsolete

BIPOLAR TRANSISTORS - BJT NPN 30VCBO 25VCEO 6.0VEBO 50MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	PN3565 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Frequency - Transition	240 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	350 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	25 V

Part	Package / Case	Package / Case	Power - Max [Max]	Transistor Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package
Central Semiconductor Corp PN3565 TIN/LEAD	TO-226AA	TO-226-3 TO-92-3	625 mW	NPN	240 MHz	25 V	Through Hole	350 mV	50 mA	150	150 °C	-65 °C	100 nA	TO-92-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00
Mouser	N/A	2500	$ 0.44

General part information

BIPOLAR TRANSISTORS - BJT NPN 30VCBO 25VCEO 6.0VEBO 50MA 625MW

Technical documentation and resources

No documents available