Discrete Semiconductor Products
TK190A65Z,S4X
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.19 Ω@10V, TO-220SIS, DTMOSⅥ
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Discrete Semiconductor Products
TK190A65Z,S4X
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.19 Ω@10V, TO-220SIS, DTMOSⅥ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK190A65Z,S4X |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 15 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1370 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) @ Id, Vgs | 190 mOhm |
| Supplier Device Package | TO-220SIS |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 45 | $ 4.20 | |
Description
General part information
TK190A65Z Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.19 Ω@10V, TO-220SIS, DTMOSⅥ
Documents
Technical documentation and resources