Integrated Circuits (ICs)

MT44K32M36RB-107E:A

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Micron Technology Inc.

DRAM, DDR, 1.125 GBIT, 32M X 36BIT, 1.2 GHZ, BGA, 168 PINS

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Integrated Circuits (ICs)

MT44K32M36RB-107E:A

Active

Micron Technology Inc.

DRAM, DDR, 1.125 GBIT, 32M X 36BIT, 1.2 GHZ, BGA, 168 PINS

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT44K32M36RB-107E:A

Access Time	8 ns
Clock Frequency	933 MHz
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	32M x 36
Memory Size	1.125 Gbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	95 °C
Operating Temperature [Min]	0 °C
Package / Case	168-TBGA
Supplier Device Package	168-BGA (13.5x13.5)
Technology	RLDRAM 3
Voltage - Supply [Max]	1.42 V
Voltage - Supply [Min]	1.28 V

MT44K32M36 Series

Part	Package / Case	Clock Frequency	Memory Type	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Memory Size	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Access Time	Memory Interface	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Organization	Mounting Type	Memory Format
Micron Technology Inc. MT44K32M36RCT-125E:A TR	168-LBGA	800 MHz	Volatile	RLDRAM 3	95 °C	0 °C	1.125 Gbit	168-FBGA	13.5	13.5	12 ns	Parallel	1.28 V	1.42 V	32M x 36	Surface Mount	DRAM
Micron Technology Inc. MT44K32M36RB-083F:A TR	168-TBGA	1.2 GHz	Volatile	RLDRAM 3	95 °C	0 °C	1.125 Gbit	168-BGA (13.5x13.5)			6.67 ns	Parallel	1.28 V	1.42 V	32M x 36	Surface Mount	DRAM
Micron Technology Inc. MT44K32M36RB-107E:A	168-TBGA	933 MHz	Volatile	RLDRAM 3	95 °C	0 °C	1.125 Gbit	168-BGA (13.5x13.5)			8 ns	Parallel	1.28 V	1.42 V	32M x 36	Surface Mount	DRAM
Micron Technology Inc. MT44K32M36RCT-125:A TR	168-LBGA	800 MHz	Volatile	RLDRAM 3	95 °C	0 °C	1.125 Gbit	168-FBGA	13.5	13.5	12 ns	Parallel	1.28 V	1.42 V	32M x 36	Surface Mount	DRAM
Micron Technology Inc. MT44K32M36RB-093F:A TR	168-TBGA	1066 MHz	Volatile	RLDRAM 3	95 °C	0 °C	1.125 Gbit	168-BGA (13.5x13.5)			7.5 ns	Parallel	1.28 V	1.42 V	32M x 36	Surface Mount	DRAM
Micron Technology Inc. MT44K32M36RB-107E IT:A TR	168-TBGA	933 MHz	Volatile	RLDRAM 3	95 °C	-40 °C	1.125 Gbit	168-BGA (13.5x13.5)			8 ns	Parallel	1.28 V	1.42 V	32M x 36	Surface Mount	DRAM
Micron Technology Inc. MT44K32M36RB-093E:A TR	168-TBGA	1066 MHz	Volatile	RLDRAM 3	95 °C	0 °C	1.125 Gbit	168-BGA (13.5x13.5)			8 ns	Parallel	1.28 V	1.42 V	32M x 36	Surface Mount	DRAM

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 55.66
	Tray	1190	$ 55.32
Newark	Each	100	$ 48.96

Description

General part information

MT44K32M36 Series

MT44K32M36RB-107E:A is a RLDRAM®3 high-speed memory device designed for high-bandwidth data storage-telecommunications, networking, cache applications, and so forth. The chip’s 16-bank architecture is optimized for sustainable high-speed operation. The DDR I/O interface transfers two data bits per clock cycle at the I/O balls. Output data is referenced to the READ strobes. Commands, addresses, and control signals are also registered at every positive edge of the differential input clock, while input data is registered at both positive and negative edges of the input data strobes. The device is supplied with 1.35V for the core and 1.2V for the output drivers. The 2.5V supply is used for an internal supply. Bank-scheduled refresh is supported with the row address generated internally.

Documents

Technical documentation and resources