Discrete Semiconductor Products

G2N65K

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MOSFET N-CH 650V 2A 35W TO-252

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Discrete Semiconductor Products

Active

MOSFET N-CH 650V 2A 35W TO-252

Technical Specifications

Parameters and characteristics for this part

Specification	G2N65K

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	35 W
Rds On (Max) @ Id, Vgs [Max]	5 Ohm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2443	$ 0.81

General part information

MOSFET N-CH 650V 2A 35W TO-252

Technical documentation and resources