Discrete Semiconductor Products

RD3U040CNTL1

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MOSFET N-CH 250V 4A TO252

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Discrete Semiconductor Products

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MOSFET N-CH 250V 4A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	RD3U040CNTL1

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	29 W
Rds On (Max) @ Id, Vgs	1.3 Ohm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Technology
Rohm Semiconductor RD3U040CNTL1	5.5 V	8.5 nC	-55 °C	150 °C	350 pF	N-Channel	250 V	4 A	TO-252	30 V	10 V	29 W	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.3 Ohm	MOSFET (Metal Oxide)

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General part information

N-Channel 250 V 4A (Tc) 29W (Tc) Surface Mount TO-252

Technical documentation and resources

No documents available