Specification	BUK9M28-80EX

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16.7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2275 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	75 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

BUK9M28-80E Series

N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33

Part	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Qualification	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Grade	Current - Continuous Drain (Id) @ 25°C
Nexperia USA Inc. BUK9M28-80EX	175 °C	-55 °C	MOSFET (Metal Oxide)	75 W	5 V	10 V	N-Channel	25 mOhm	LFPAK33	AEC-Q101	2.1 V	Surface Mount	80 V	2275 pF	16.7 nC	Automotive	33 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.52

Description

General part information

BUK9M28-80E Series

Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.