Discrete Semiconductor Products

SQP50N06-09L_GE3

Obsolete

MOSFET N-CH 60V 50A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 50A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SQP50N06-09L_GE3

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	72 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	3065 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	136 W
Qualification	AEC-Q101
Rds On (Max)	9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Qualification	Rds On (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Grade	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Mounting Type	FET Type	Package / Case	Technology	Package Name
Vishay Dale SQP50N06-09L_GE3	AEC-Q101	9 mOhm	136 W	60 V	72 nC	Automotive	3065 pF	10 V	4.5 V	50 A	20 V	-55 °C	175 °C	2.5 V	Through Hole	N-Channel	TO-220-3	MOSFET (Metal Oxide)	TO-220AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 60 V 50A (Tc) 136W (Tc) Through Hole TO-220AB

Technical documentation and resources